Infineon IPW Type N-Channel MOSFET, 21 A, 650 V Enhancement, 3-Pin PG-TO-247
- RS Stock No.:
- 273-3028
- Mfr. Part No.:
- IPW65R115CFD7AXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD8.11
(exc. GST)
SGD8.84
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 215 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | SGD8.11 |
| 5 - 9 | SGD7.94 |
| 10 - 24 | SGD7.39 |
| 25 - 49 | SGD6.79 |
| 50 + | SGD6.26 |
*price indicative
- RS Stock No.:
- 273-3028
- Mfr. Part No.:
- IPW65R115CFD7AXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 115mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 114W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AECQ101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 115mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 114W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AECQ101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon automotive SJ power MOSFET is in TO-247 package is part of the automotive qualified 650V cool MOS SJ power MOSFET CFD7A product family.
Enabling of higher power density designs
Scalable as designed for use in PFC and DC-DC stage
Granular portfolio available
Related links
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R115CFD7AXKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R099CFD7AXKSA1
- Infineon IPW Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO-247 IPW60R037CM8XKSA1
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin PG-TO-247 IPW65R029CFD7XKSA1
- Infineon IPW Type N-Channel Power Transistor 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin TO-247