MPN

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7

RS Stock No.:: 827-0462
Mfr. Part No.:: DMN2014LHAB-7
Manufacturer:: DiodesZetex

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 50 units)*

SGD31.45

(exc. GST)

SGD34.30

(inc. GST)

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

In Stock

Plus 2,950 unit(s) shipping from 05 January 2026

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Units	Per unit	Per Pack*
50 - 50	SGD0.629	SGD31.45
100 - 200	SGD0.616	SGD30.80
250 - 450	SGD0.597	SGD29.85
500 - 950	SGD0.579	SGD28.95
1000 +	SGD0.562	SGD28.10

*price indicative

RS Stock No.:: 827-0462
Mfr. Part No.:: DMN2014LHAB-7
Manufacturer:: DiodesZetex

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9.3A
	Maximum Drain Source Voltage Vds	20V
	Package Type	UDFN
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	28mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	0.5nC
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	150°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	1.7W
	Transistor Configuration	Isolated
	Maximum Operating Temperature	-55°C
	Standards/Approvals	AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202
	Height	0.6mm
	Width	2.05 mm
	Length	3.05mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand DiodesZetex
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9.3A
	Maximum Drain Source Voltage Vds 20V
	Package Type UDFN
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 28mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 0.5nC
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature 150°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 1.7W
	Transistor Configuration Isolated
	Maximum Operating Temperature -55°C
	Standards/Approvals AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202
	Height 0.6mm
	Width 2.05 mm
	Length 3.05mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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