Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

RS Stock No.:: 827-0462
Mfr. Part No.:: DMN2014LHAB-7
Manufacturer:: DiodesZetex

Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 50 units)**

SGD30.30

(exc. GST)

SGD33.05

(inc. GST)

2950 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Pack**
50 - 50	SGD0.606	SGD30.30
100 - 200	SGD0.593	SGD29.65
250 - 450	SGD0.575	SGD28.75
500 - 950	SGD0.558	SGD27.90
1000 +	SGD0.541	SGD27.05

**price indicative

RS Stock No.:: 827-0462
Mfr. Part No.:: DMN2014LHAB-7
Manufacturer:: DiodesZetex

DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	20 V
Package Type	U-DFN2030
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	28 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	1.7 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Number of Elements per Chip	2
Transistor Material	Si
Width	2.05mm
Typical Gate Charge @ Vgs	16 nC @ 4.5 V
Length	3.05mm
Maximum Operating Temperature	+150 °C
Height	0.6mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

FREE delivery for orders over SGD250.00 (ex GST)

Dual N-Channel MOSFET, Diodes Inc.

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