DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 620 mA, 60 V Enhancement, 6-Pin SOT-563 DMG1029SV-7
- RS Stock No.:
- 822-2523
- Mfr. Part No.:
- DMG1029SV-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Subtotal (1 pack of 50 units)*
SGD13.75
(exc. GST)
SGD15.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
- 28,100 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 550 | SGD0.275 | SGD13.75 |
| 600 - 1450 | SGD0.266 | SGD13.30 |
| 1500 + | SGD0.258 | SGD12.90 |
*price indicative
- RS Stock No.:
- 822-2523
- Mfr. Part No.:
- DMG1029SV-7
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 620mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.3nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Height | 0.6mm | |
| Width | 1.25 mm | |
| Standards/Approvals | J-STD-020, MIL-STD-202, AEC-Q101, RoHS, UL 94V-0 | |
| Length | 1.7mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 620mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.3nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Height 0.6mm | ||
Width 1.25 mm | ||
Standards/Approvals J-STD-020, MIL-STD-202, AEC-Q101, RoHS, UL 94V-0 | ||
Length 1.7mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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