DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 520 mA, 20 V Enhancement, 6-Pin SOT-963
- RS Stock No.:
- 122-3245
- Mfr. Part No.:
- DMC2990UDJ-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Subtotal (1 reel of 10000 units)*
SGD1,660.00
(exc. GST)
SGD1,810.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
- Shipping from 14 April 2026
Units | Per unit | Per Reel* |
|---|---|---|
| 10000 - 10000 | SGD0.166 | SGD1,660.00 |
| 20000 - 30000 | SGD0.161 | SGD1,610.00 |
| 40000 - 90000 | SGD0.151 | SGD1,510.00 |
| 100000 - 190000 | SGD0.147 | SGD1,470.00 |
| 200000 + | SGD0.144 | SGD1,440.00 |
*price indicative
- RS Stock No.:
- 122-3245
- Mfr. Part No.:
- DMC2990UDJ-7
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 520mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-963 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.6V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Maximum Power Dissipation Pd | 350mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101 | |
| Width | 0.85 mm | |
| Height | 0.45mm | |
| Length | 1.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 520mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-963 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.6V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Maximum Power Dissipation Pd 350mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101 | ||
Width 0.85 mm | ||
Height 0.45mm | ||
Length 1.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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