Vishay Si4164DY N-Channel TrenchFET Power MOSFET, 30 A, 30 V Enhancement, 8-Pin SOIC SI4164DY-T1-GE3

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Subtotal (1 pack of 10 units)*

SGD15.40

(exc. GST)

SGD16.80

(inc. GST)

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Units
Per unit
Per Pack*
10 - 90SGD1.54SGD15.40
100 - 290SGD1.502SGD15.02
300 +SGD1.39SGD13.90

*price indicative

Packaging Options:
RS Stock No.:
812-3198
Mfr. Part No.:
SI4164DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

TrenchFET Power MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

Si4164DY

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0032Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

26.5nC

Forward Voltage Vf

720mV

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC JS709A, RoHS

Width

4mm

Length

5mm

Height

1.55mm

Automotive Standard

No

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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