Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET, 4.7 A, 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3
- RS Stock No.:
- 818-1444
- Mfr. Part No.:
- SI9407BDY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD25.66
(exc. GST)
SGD27.96
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Being discontinued
- Final 1,300 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD1.283 | SGD25.66 |
| 40 - 80 | SGD1.256 | SGD25.12 |
| 100 - 180 | SGD1.218 | SGD24.36 |
| 200 - 380 | SGD1.181 | SGD23.62 |
| 400 + | SGD1.144 | SGD22.88 |
*price indicative
- RS Stock No.:
- 818-1444
- Mfr. Part No.:
- SI9407BDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Series | Si9407BDY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.12Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Length | 5mm | |
| Height | 1.55mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Series Si9407BDY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.12Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Length 5mm | ||
Height 1.55mm | ||
Width 4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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