N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

RS Stock No.:: 802-4357
Mfr. Part No.:: IXFB210N30P3
Manufacturer:: IXYS

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

Bulk discount available

Price Each

SGD43.16

(exc. GST)

SGD47.04

(inc. GST)

23 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
1 - 12	SGD43.16
13 +	SGD41.87

RS Stock No.:: 802-4357
Mfr. Part No.:: IXFB210N30P3
Manufacturer:: IXYS

IXFB210N30P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	210 A
Maximum Drain Source Voltage	300 V
Package Type	PLUS264
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	20.29mm
Typical Gate Charge @ Vgs	268 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Width	5.31mm
Height	26.59mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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