N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-247 IXYS IXFH60N50P3

RS Stock No.:: 168-4730
Mfr. Part No.:: IXFH60N50P3
Manufacturer:: IXYS

N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-247 IXYS IXFH60N50P3

This image is representative of the product range

Subtotal (1 tube of 30 units)**

SGD306.12

(exc. GST)

SGD333.66

(inc. GST)

15 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Tube**
30 +	SGD10.204	SGD306.12

**price indicative

RS Stock No.:: 168-4730
Mfr. Part No.:: IXFH60N50P3
Manufacturer:: IXYS

IXFT60N50P3, IXFQ60N50P3, IXFH60N50P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	500 V
Series	HiperFET, Polar3
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Length	16.26mm
Width	5.3mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	96 nC @ 10 V
Height	21.46mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-247 IXYS IXFH60N50P3

FREE delivery for orders over SGD250.00 (ex GST)

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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