N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXYS IXFX80N60P3

RS Stock No.:: 168-4748
Mfr. Part No.:: IXFX80N60P3
Manufacturer:: IXYS

N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXYS IXFX80N60P3

This image is representative of the product range

Price Each (In a Tube of 30)**

SGD19.691

(exc. GST)

SGD21.463

(inc. GST)

31 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Tube**
30 +	SGD19.691	SGD590.73

**price indicative

RS Stock No.:: 168-4748
Mfr. Part No.:: IXFX80N60P3
Manufacturer:: IXYS

IXFK80N60P3, IXFX80N60P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	600 V
Package Type	PLUS247
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.3 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	16.13mm
Typical Gate Charge @ Vgs	190 nC @ 10 V
Maximum Operating Temperature	+150 °C
Width	5.21mm
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	21.34mm

N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXYS IXFX80N60P3

FREE delivery for orders over SGD250.00 (ex GST)

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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