N-Channel MOSFET, 132 A, 500 V, 3-Pin PLUS264 IXYS IXFB132N50P3

RS Stock No.:: 802-4348
Mfr. Part No.:: IXFB132N50P3
Manufacturer:: IXYS

N-Channel MOSFET, 132 A, 500 V, 3-Pin PLUS264 IXYS IXFB132N50P3

This image is representative of the product range

Bulk discount available

Price Each

SGD34.26

(exc. GST)

SGD37.34

(inc. GST)

27 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
1 - 12	SGD34.26
13 +	SGD33.23

RS Stock No.:: 802-4348
Mfr. Part No.:: IXFB132N50P3
Manufacturer:: IXYS

IXFB132N50P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	132 A
Maximum Drain Source Voltage	500 V
Series	HiperFET, Polar3
Package Type	PLUS264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	39 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Length	20.29mm
Typical Gate Charge @ Vgs	250 nC @ 10 V
Width	5.31mm
Transistor Material	Si
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	26.59mm

N-Channel MOSFET, 132 A, 500 V, 3-Pin PLUS264 IXYS IXFB132N50P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

Related links