N-Channel MOSFET, 32 A, 800 V, 3-Pin PLUS247 IXYS IXFX32N80Q3

RS Stock No.:: 801-1496
Distrelec Article No.:: 302-53-407
Mfr. Part No.:: IXFX32N80Q3
Manufacturer:: IXYS

N-Channel MOSFET, 32 A, 800 V, 3-Pin PLUS247 IXYS IXFX32N80Q3

This image is representative of the product range

Bulk discount available

Price Each**

SGD43.48

(exc. GST)

SGD47.39

(inc. GST)

Temporarily out of stock - back order for despatch 21/11/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit
1 - 9	SGD43.48
10 - 49	SGD42.64
50 - 99	SGD41.76
100 - 249	SGD40.93
250 +	SGD40.89

**price indicative

RS Stock No.:: 801-1496
Distrelec Article No.:: 302-53-407
Mfr. Part No.:: IXFX32N80Q3
Manufacturer:: IXYS

IXFK32N80Q3, IXFX32N80Q3, HiperFET Power MOSFET, Q3-Class, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	32 A
Maximum Drain Source Voltage	800 V
Series	HiperFET, Q3-Class
Package Type	PLUS247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	270 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6V
Maximum Power Dissipation	1 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	140 nC @ 10 V
Length	16.13mm
Transistor Material	Si
Width	5.21mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Height	21.34mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 32 A, 800 V, 3-Pin PLUS247 IXYS IXFX32N80Q3

FREE delivery for orders over SGD250.00 (ex GST)

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

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