N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXYS IXFH50N60P3

RS Stock No.:: 168-4731
Mfr. Part No.:: IXFH50N60P3
Manufacturer:: IXYS

N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXYS IXFH50N60P3

This image is representative of the product range

Subtotal (1 tube of 30 units)**

SGD306.12

(exc. GST)

SGD333.66

(inc. GST)

Temporarily out of stock - back order for despatch 11/02/2026, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD150.00 (ex GST)

Units	Per unit	Per Tube**
30 +	SGD10.204	SGD306.12

**price indicative

RS Stock No.:: 168-4731
Mfr. Part No.:: IXFH50N60P3
Manufacturer:: IXYS

IXFT50N60P3, IXFQ50N60P3, IXFH50N60P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	50 A
Maximum Drain Source Voltage	600 V
Package Type	TO-247
Series	HiperFET, Q3-Class
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	145 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Width	5.3mm
Length	16.26mm
Typical Gate Charge @ Vgs	94 nC @ 10 V
Height	21.46mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXYS IXFH50N60P3

FREE delivery for orders over SGD150.00 (ex GST)

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

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