N-Channel MOSFET, 32 A, 800 V, 3-Pin PLUS247 IXYS IXFX32N80Q3

RS Stock No.:: 168-4717
Mfr. Part No.:: IXFX32N80Q3
Manufacturer:: IXYS

N-Channel MOSFET, 32 A, 800 V, 3-Pin PLUS247 IXYS IXFX32N80Q3

This image is representative of the product range

Price Each (In a Tube of 30)**

SGD36.054

(exc. GST)

SGD39.299

(inc. GST)

Temporarily out of stock - back order for despatch 22/11/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Tube**
30 +	SGD36.054	SGD1,081.62

**price indicative

RS Stock No.:: 168-4717
Mfr. Part No.:: IXFX32N80Q3
Manufacturer:: IXYS

IXFK32N80Q3, IXFX32N80Q3, HiperFET Power MOSFET, Q3-Class, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	32 A
Maximum Drain Source Voltage	800 V
Package Type	PLUS247
Series	HiperFET, Q3-Class
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	270 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6V
Maximum Power Dissipation	1 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	5.21mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	140 nC @ 10 V
Transistor Material	Si
Length	16.13mm
Height	21.34mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 32 A, 800 V, 3-Pin PLUS247 IXYS IXFX32N80Q3

FREE delivery for orders over SGD250.00 (ex GST)

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

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