onsemi NTD Type N-Channel MOSFET, 20 A, 30 V Enhancement, 3-Pin TO-252 NTD20N03L27T4G
- RS Stock No.:
- 793-1043
- Mfr. Part No.:
- NTD20N03L27T4G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD11.69
(exc. GST)
SGD12.74
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 4,840 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 20 | SGD1.169 | SGD11.69 |
| 30 - 40 | SGD1.126 | SGD11.26 |
| 50 + | SGD1.056 | SGD10.56 |
*price indicative
- RS Stock No.:
- 793-1043
- Mfr. Part No.:
- NTD20N03L27T4G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | NTD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 74W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 24 V | |
| Typical Gate Charge Qg @ Vgs | 18.9nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series NTD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 74W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 24 V | ||
Typical Gate Charge Qg @ Vgs 18.9nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.38mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
- onsemi NTD Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- onsemi NTD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- onsemi NTD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 NTD20N06T4G
- onsemi NTD Type N-Channel MOSFET & Diode 600 V Enhancement, 3-Pin TO-252 NTD280N60S5Z
- onsemi NTD Type N-Channel MOSFET 1200 V, 5-Pin TO-252
- onsemi NTD Type N-Channel MOSFET 1200 V, 5-Pin TO-252 NTD5C632NLT4G
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF7832TRPBF