N-Channel MOSFET, 20 A, 100 V, 3-Pin DPAK ROHM RD3P200SNTL
- RS Stock No.:
- 172-0472
- Mfr. Part No.:
- RD3P200SNTL
- Manufacturer:
- ROHM
Temporarily out of stock - back order for despatch 16/12/2024, delivery within 4 working days from despatch date
Price Each (In a Pack of 10)
SGD1.639
(exc. GST)
SGD1.787
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 240 | SGD1.639 | SGD16.39 |
| 250 - 740 | SGD1.604 | SGD16.04 |
| 750 - 1190 | SGD1.556 | SGD15.56 |
| 1200 - 1990 | SGD1.509 | SGD15.09 |
| 2000 + | SGD1.463 | SGD14.63 |
*price indicative
- RS Stock No.:
- 172-0472
- Mfr. Part No.:
- RD3P200SNTL
- Manufacturer:
- ROHM
Technical data sheets
Legislation and Compliance
Product Details
RD3P200SN is a Power MOSFET with Low on - resistance., suitable for Switching.
Low on-resistance.
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | DPAK (TO-252) |
| Series | RD3P200SN |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 50 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 20 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Width | 6.4mm |
| Typical Gate Charge @ Vgs | 55 nC @ 10 V |
| Length | 6.8mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |
| Height | 2.3mm |