onsemi NTD Type N-Channel MOSFET, 58 A, 1200 V, 5-Pin TO-252 NTD5C632NLT4G
- RS Stock No.:
- 244-9180
- Mfr. Part No.:
- NTD5C632NLT4G
- Manufacturer:
- onsemi
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Subtotal (1 pack of 2 units)*
SGD3.72
(exc. GST)
SGD4.06
(inc. GST)
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In Stock
- 2,374 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD1.86 | SGD3.72 |
| 10 - 98 | SGD1.825 | SGD3.65 |
| 100 - 248 | SGD1.785 | SGD3.57 |
| 250 - 498 | SGD1.755 | SGD3.51 |
| 500 + | SGD1.715 | SGD3.43 |
*price indicative
- RS Stock No.:
- 244-9180
- Mfr. Part No.:
- NTD5C632NLT4G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-252 | |
| Series | NTD | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-252 | ||
Series NTD | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MOSFET has Drain−to−Source Voltage is 60 V and Gate−to−Source Voltage is 20 V
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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