onsemi NTHL N-Channel MOSFET, 58 A, 1.2 kV, 5-Pin TO-247 NTHL045N065SC1
- RS Stock No.:
- 241-0743
- Mfr. Part No.:
- NTHL045N065SC1
- Manufacturer:
- onsemi
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SGD5,504.85
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SGD6,000.30
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 450 - 450 | SGD12.233 | SGD5,504.85 | - |
| 900 - 900 | SGD12.127 | SGD5,457.15 | SGD95.40 |
| 1350 + | SGD11.81 | SGD5,314.50 | SGD571.05 |
*price indicative
- RS Stock No.:
- 241-0743
- Mfr. Part No.:
- NTHL045N065SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-247 | |
| Series | NTHL | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Maximum Power Dissipation Pd | 117W | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-247 | ||
Series NTHL | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Maximum Power Dissipation Pd 117W | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor 650 V, 42 mΩ N-Channel silicon carbide MOSFET. Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Junction Temperature
High Speed Switching and Low Capacitance
Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A
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