Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET, 320 mA, 60 V Enhancement, 6-Pin SC-88 BSS138PS,115
- RS Stock No.:
- 792-0901
- Mfr. Part No.:
- BSS138PS,115
- Manufacturer:
- Nexperia
This image is representative of the product range
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Subtotal (1 reel of 40 units)*
SGD10.68
(exc. GST)
SGD11.64
(inc. GST)
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In Stock
- Plus 360 unit(s) shipping from 29 December 2025
- Plus 360 unit(s) shipping from 05 January 2026
- Plus 3,000 unit(s) shipping from 20 May 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 40 - 360 | SGD0.267 | SGD10.68 |
| 400 - 760 | SGD0.259 | SGD10.36 |
| 800 + | SGD0.251 | SGD10.04 |
*price indicative
- RS Stock No.:
- 792-0901
- Mfr. Part No.:
- BSS138PS,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 320mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | Trench MOSFET | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.6Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.72nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 320mW | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 320mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series Trench MOSFET | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.6Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.72nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 320mW | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Width 1.35 mm | ||
Height 1mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Related links
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