MPN

Renesas P-Channel MOSFET, 120 A, 60 V, 4-Pin IPAK 2SJ601-AZ

This image is representative of the product range

Bulk discount available

Subtotal 25 units (supplied in a bag)*

SGD43.90

(exc. GST)

SGD47.85

(inc. GST)

Stock information currently inaccessible - Please check back later

*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Renesas Electronics
	Channel Type	P
	Maximum Continuous Drain Current	120 A
	Maximum Drain Source Voltage	60 V
	Package Type	IPAK (TO-251)
	Mounting Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance	46 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	65 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Width	7mm
	Length	6.5mm
	Typical Gate Charge @ Vgs	63 nC @ 10 V
	Height	2.3mm

	Select all
	Brand Renesas Electronics
	Channel Type P
	Maximum Continuous Drain Current 120 A
	Maximum Drain Source Voltage 60 V
	Package Type IPAK (TO-251)
	Mounting Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance 46 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 65 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Width 7mm
	Length 6.5mm
	Typical Gate Charge @ Vgs 63 nC @ 10 V
	Height 2.3mm

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy