MPN

Renesas P-Channel MOSFET, 30 A, 60 V, 4-Pin IPAK 2SJ598-AZ

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Subtotal 20 units (supplied in a bag)*

SGD16.94

(exc. GST)

SGD18.46

(inc. GST)

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*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Renesas Electronics
	Channel Type	P
	Maximum Continuous Drain Current	30 A
	Maximum Drain Source Voltage	60 V
	Package Type	IPAK (TO-251)
	Mounting Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance	190 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	23 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	7mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	15 nC @ 10 V
	Number of Elements per Chip	1
	Length	6.5mm
	Maximum Operating Temperature	+150 °C
	Height	2.3mm

	Select all
	Brand Renesas Electronics
	Channel Type P
	Maximum Continuous Drain Current 30 A
	Maximum Drain Source Voltage 60 V
	Package Type IPAK (TO-251)
	Mounting Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance 190 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 23 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 7mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 15 nC @ 10 V
	Number of Elements per Chip 1
	Length 6.5mm
	Maximum Operating Temperature +150 °C
	Height 2.3mm

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