Vishay Single SQM 1 Type P-Channel TrenchFET Power MOSFET, 120 A, 60 V, 3-Pin TO-263 SQM120P06-07L_GE3
- RS Stock No.:
- 180-7921
- Mfr. Part No.:
- SQM120P06-07L_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD29.07
(exc. GST)
SGD31.685
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 1,610 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD5.814 | SGD29.07 |
| 25 - 95 | SGD5.692 | SGD28.46 |
| 100 - 245 | SGD5.52 | SGD27.60 |
| 250 - 495 | SGD5.352 | SGD26.76 |
| 500 + | SGD5.194 | SGD25.97 |
*price indicative
- RS Stock No.:
- 180-7921
- Mfr. Part No.:
- SQM120P06-07L_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | TrenchFET Power MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | SQM | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0067Ω | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 0.41 in | |
| Length | 0.625in | |
| Height | 0.19in | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type TrenchFET Power MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series SQM | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0067Ω | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 0.41 in | ||
Length 0.625in | ||
Height 0.19in | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 6.7mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• Package low thermal resistance
• TrenchFET power MOSFET
Applications
• Adaptor switches
• Load switches
• Notebook PCs
Related links
- Vishay Single SQM 1 Type P-Channel TrenchFET Power MOSFET 60 V, 3-Pin TO-263
- Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3
- Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3
- Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 8-Pin SOIC
- Vishay Single 1 Type P-Channel Power MOSFET 100 V TO-263
- Vishay Single 1 Type P-Channel Power MOSFET 60 V TO-263
- Vishay Single 1 Type P-Channel Power MOSFET 100 V TO-263 IRF9520SPBF