Vishay Single 1 Type P-Channel Power MOSFET, 11 A, 60 V TO-263
- RS Stock No.:
- 180-8832
- Mfr. Part No.:
- IRF9Z24SPBF
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
SGD14.07
(exc. GST)
SGD15.335
(inc. GST)
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Last RS stock
- Final 55 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD2.814 | SGD14.07 |
| 10 - 20 | SGD2.73 | SGD13.65 |
| 25 + | SGD2.648 | SGD13.24 |
*price indicative
- RS Stock No.:
- 180-8832
- Mfr. Part No.:
- IRF9Z24SPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.28Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 60W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 2.79mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.28Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 60W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 2.79mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRF9Z24S is a P-channel power MOSFET having drain to source(Vds) voltage of -60V.The gate to source voltage(VGS) is 20V. It is having D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 0.28ohms at 10VGS. Maximum drain current -11A.
Advanced process technology
Surface mount
175 °C operating temperature
Related links
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