Vishay Single 1 Type P-Channel Power MOSFET, -0.4 A, 200 V, 4-Pin HVMDIP IRFD9210PBF
- RS Stock No.:
- 180-8321
- Mfr. Part No.:
- IRFD9210PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 100 units)*
SGD103.60
(exc. GST)
SGD112.90
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 100 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 100 - 400 | SGD1.036 | SGD103.60 |
| 500 - 900 | SGD1.025 | SGD102.50 |
| 1000 - 2400 | SGD1.002 | SGD100.20 |
| 2500 - 4900 | SGD0.946 | SGD94.60 |
| 5000 + | SGD0.841 | SGD84.10 |
*price indicative
- RS Stock No.:
- 180-8321
- Mfr. Part No.:
- IRFD9210PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -0.4A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | HVMDIP | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.9nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Width | 5 mm | |
| Length | 10.79mm | |
| Height | 8.38mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -0.4A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type HVMDIP | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.9nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Width 5 mm | ||
Length 10.79mm | ||
Height 8.38mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Vishay IRFD9210 is a P-channel power MOSFET having drain to source(Vds) voltage of -200V.The gate to source voltage(VGS) is 20V. It is having HVMDIP package. It offers drain to source resistance (RDS.) 3ohms at 10VGS.
Dynamic dV/dt rating
Repetitive avalanche rated
For automatic insertion
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