Toshiba Dual N-Channel MOSFET, 1.6 A, 20 V, 6-Pin UF SSM6N39TU(TE85L,F)

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Subtotal 20 units (supplied on a continuous strip)*

SGD8.00

(exc. GST)

SGD8.80

(inc. GST)

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Units
Per unit
20 - 90SGD0.40
100 - 190SGD0.371
200 - 390SGD0.347
400 +SGD0.325

*price indicative

Packaging Options:
RS Stock No.:
756-2791P
Mfr. Part No.:
SSM6N39TU(TE85L,F)
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

20 V

Package Type

UF

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

247 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

500 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

1.7mm

Number of Elements per Chip

2

Transistor Material

Si

Width

2mm

Height

0.7mm

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