Toshiba Dual N-Channel MOSFET, 1.6 A, 20 V, 6-Pin UF SSM6N39TU(TE85L,F)
- RS Stock No.:
- 756-2791P
- Mfr. Part No.:
- SSM6N39TU(TE85L,F)
- Manufacturer:
- Toshiba
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Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 756-2791P
- Mfr. Part No.:
- SSM6N39TU(TE85L,F)
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | UF | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 247 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 7.5 nC @ 10 V | |
| Width | 2mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
| Length | 1.7mm | |
| Height | 0.7mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.6 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type UF | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 247 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 7.5 nC @ 10 V | ||
Width 2mm | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Length 1.7mm | ||
Height 0.7mm | ||
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