MPN

Toshiba Dual 2 N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SOT-363

Name: Toshiba Dual 2 N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SOT-363
Brand: Toshiba
SKU: 171-2410
Availability: OutOfStock

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Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Toshiba
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	300mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-363
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	1.75Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	0.39nC
	Minimum Operating Temperature	150°C
	Forward Voltage Vf	-0.79V
	Maximum Power Dissipation Pd	500mW
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Height	0.9mm
	Width	1.25mm
	Standards/Approvals	No
	Length	2mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Toshiba
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 300mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-363
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 1.75Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 0.39nC
	Minimum Operating Temperature 150°C
	Forward Voltage Vf -0.79V
	Maximum Power Dissipation Pd 500mW
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Height 0.9mm
	Width 1.25mm
	Standards/Approvals No
	Length 2mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

High-Speed Switching

Low drain-source on-resistance

RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)

RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)

RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

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