Toshiba Dual 2 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SOT-363
- RS Stock No.:
- 171-2410
- Mfr. Part No.:
- SSM6N7002KFU
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
SGD195.00
(exc. GST)
SGD213.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 27 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | SGD0.065 | SGD195.00 |
| 6000 - 6000 | SGD0.064 | SGD192.00 |
| 9000 + | SGD0.062 | SGD186.00 |
*price indicative
- RS Stock No.:
- 171-2410
- Mfr. Part No.:
- SSM6N7002KFU
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.75Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.39nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | -0.79V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 0.9mm | |
| Length | 2mm | |
| Width | 1.25 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.75Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.39nC | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf -0.79V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 0.9mm | ||
Length 2mm | ||
Width 1.25 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TH
High-Speed Switching
Low drain-source on-resistance
RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)
Related links
- Toshiba Dual 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363 SSM6N7002KFU
- Toshiba Type N-Channel MOSFET 60 V, 6-Pin US6
- Toshiba Type N-Channel MOSFET 60 VLF(T
- Infineon Isolated OptiMOS 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-88 2N7002DWH6327XTSA1
- Infineon Isolated OptiMOS 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-88
- Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET 60 V Enhancement115
- Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-88
- Vishay Isolated TrenchFET 2 Type P 300 mA 6-Pin SC-89-6 SI1029X-T1-GE3