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Renesas Dual N/P-Channel-Channel MOSFET, 1.4 A, 20 V, 6-Pin SOT-363 UPA679TB-T1-A

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Subtotal 80 units (supplied on a continuous strip)*

SGD16.24

(exc. GST)

SGD17.68

(inc. GST)

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*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Renesas Electronics
	Channel Type	N, P
	Maximum Continuous Drain Current	1.4 A
	Maximum Drain Source Voltage	20 V
	Package Type	SOT-363 (SC-88)
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	880 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.5V
	Maximum Power Dissipation	200 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-12 V, +12 V
	Width	1.25mm
	Length	2mm
	Number of Elements per Chip	2
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Height	0.9mm

	Select all
	Brand Renesas Electronics
	Channel Type N, P
	Maximum Continuous Drain Current 1.4 A
	Maximum Drain Source Voltage 20 V
	Package Type SOT-363 (SC-88)
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 880 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.5V
	Maximum Power Dissipation 200 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -12 V, +12 V
	Width 1.25mm
	Length 2mm
	Number of Elements per Chip 2
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Height 0.9mm

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