Nexperia BSS87 Type N-Channel MOSFET, 400 mA, 200 V Enhancement, 3-Pin SOT-89 BSS87,115
- RS Stock No.:
- 725-8316
- Mfr. Part No.:
- BSS87,115
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD5.34
(exc. GST)
SGD5.82
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 70 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.534 | SGD5.34 |
| 20 - 40 | SGD0.528 | SGD5.28 |
| 50 - 90 | SGD0.519 | SGD5.19 |
| 100 - 190 | SGD0.39 | SGD3.90 |
| 200 + | SGD0.385 | SGD3.85 |
*price indicative
- RS Stock No.:
- 725-8316
- Mfr. Part No.:
- BSS87,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | SOT-89 | |
| Series | BSS87 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.6mm | |
| Width | 2.6 mm | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type SOT-89 | ||
Series BSS87 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 4.6mm | ||
Width 2.6 mm | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V and Higher, Nexperia
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