STMicroelectronics Type N-Channel MOSFET, 400 mA, 600 V Enhancement, 4-Pin SOT-223 STN1HNK60
- RS Stock No.:
- 687-5131
- Mfr. Part No.:
- STN1HNK60
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD12.25
(exc. GST)
SGD13.35
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 40 unit(s) shipping from 29 December 2025
- Plus 3,500 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.225 | SGD12.25 |
| 20 - 40 | SGD1.224 | SGD12.24 |
| 50 - 90 | SGD0.93 | SGD9.30 |
| 100 - 190 | SGD0.792 | SGD7.92 |
| 200 + | SGD0.787 | SGD7.87 |
*price indicative
- RS Stock No.:
- 687-5131
- Mfr. Part No.:
- STN1HNK60
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Power Dissipation Pd | 3.3W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.5 mm | |
| Length | 6.5mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-43-897 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Power Dissipation Pd 3.3W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 3.5 mm | ||
Length 6.5mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-43-897 | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-92
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-92 STQ1HNK60R-AP
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223 STN1NK60Z
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223 BSP125H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223
- STMicroelectronics Type N-Channel MOSFET 450 V Enhancement, 4-Pin SOT-223
- STMicroelectronics Type N-Channel MOSFET 450 V Enhancement, 4-Pin SOT-223 STN3N45K3