Toshiba Type N-Channel MOSFET, 400 mA, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 171-2411
- Mfr. Part No.:
- T2N7002BK
- Manufacturer:
- Toshiba
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View bulk pricing optionSubtotal (1 reel of 3000 units)*
SGD126.00
(exc. GST)
SGD138.00
(inc. GST)
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In Stock
- Plus 3,000 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | SGD0.042 | SGD126.00 |
| 6000 - 6000 | SGD0.041 | SGD123.00 |
| 9000 + | SGD0.04 | SGD120.00 |
*price indicative
- RS Stock No.:
- 171-2411
- Mfr. Part No.:
- T2N7002BK
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.75Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | -0.79V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.39nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.75Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf -0.79V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.39nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
High-Speed Switching
ESD(HBM) level 2 kV
Low drain-source on-resistance
RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)
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