Vishay IRF840AS N-Channel MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-263 IRF840ASPBF
- RS Stock No.:
- 708-5146
- Mfr. Part No.:
- IRF840ASPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
SGD18.67
(exc. GST)
SGD20.35
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 25 unit(s) shipping from 21 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD3.734 | SGD18.67 |
| 25 - 95 | SGD3.55 | SGD17.75 |
| 100 - 245 | SGD3.374 | SGD16.87 |
| 250 - 495 | SGD3.204 | SGD16.02 |
| 500 + | SGD3.042 | SGD15.21 |
*price indicative
- RS Stock No.:
- 708-5146
- Mfr. Part No.:
- IRF840ASPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-263 | |
| Series | IRF840AS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 3.1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 9.65mm | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-263 | ||
Series IRF840AS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 3.1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 9.65mm | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay IRF840AS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263
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- Vishay IRF840LC Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220