Vishay IRF840LC Type N-Channel MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-4400
- Mfr. Part No.:
- IRF840LCPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD71.25
(exc. GST)
SGD77.65
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- 750 left, ready to ship from another location
- Final 13,100 unit(s) shipping from 15 January 2026
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | SGD1.425 | SGD71.25 |
| 250 - 950 | SGD1.417 | SGD70.85 |
| 1000 - 2450 | SGD1.385 | SGD69.25 |
| 2500 - 4950 | SGD1.306 | SGD65.30 |
| 5000 + | SGD1.157 | SGD57.85 |
*price indicative
- RS Stock No.:
- 919-4400
- Mfr. Part No.:
- IRF840LCPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | IRF840LC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series IRF840LC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
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- Vishay IRF840AS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263