Vishay IRF840AS Type N-Channel MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 178-0873
- Mfr. Part No.:
- IRF840ASPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD97.85
(exc. GST)
SGD106.65
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 550 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD1.957 | SGD97.85 |
| 150 - 200 | SGD1.884 | SGD94.20 |
| 250 + | SGD1.766 | SGD88.30 |
*price indicative
- RS Stock No.:
- 178-0873
- Mfr. Part No.:
- IRF840ASPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-263 | |
| Series | IRF840AS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.1W | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-263 | ||
Series IRF840AS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.1W | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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