onsemi BSS84 Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23 BSS84

RS Stock No.:: 671-0328
Mfr. Part No.:: BSS84
Manufacturer:: onsemi

onsemi BSS84 Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23 BSS84

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

SGD3.42

(exc. GST)

SGD3.73

(inc. GST)

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In Stock

50 unit(s) ready to ship
Plus 1,130 unit(s) ready to ship from another location
Plus 1,390 unit(s) shipping from 05 January 2026

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Units	Per unit	Per Pack*
10 - 90	SGD0.342	SGD3.42
100 - 990	SGD0.331	SGD3.31
1000 - 2990	SGD0.321	SGD3.21
3000 +	SGD0.311	SGD3.11

*price indicative

RS Stock No.:: 671-0328
Mfr. Part No.:: BSS84
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	130mA
	Maximum Drain Source Voltage Vds	50V
	Series	BSS84
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	10Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	250mW
	Minimum Operating Temperature	-65°C
	Typical Gate Charge Qg @ Vgs	0.9nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3mm
	Height	1mm
	Width	1.3 mm
	Automotive Standard	AEC-Q200, AEC-Q100, AEC-Q101

	Select all
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 130mA
	Maximum Drain Source Voltage Vds 50V
	Series BSS84
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 10Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 250mW
	Minimum Operating Temperature -65°C
	Typical Gate Charge Qg @ Vgs 0.9nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3mm
	Height 1mm
	Width 1.3 mm
	Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.