onsemi BSS84L Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23 BSS84LT1G
- RS Stock No.:
- 463-329
- Mfr. Part No.:
- BSS84LT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 100 units)*
SGD11.70
(exc. GST)
SGD12.80
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 100 unit(s) ready to ship from another location
- Plus 26,900 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 200 | SGD0.117 | SGD11.70 |
| 300 - 400 | SGD0.113 | SGD11.30 |
| 500 + | SGD0.106 | SGD10.60 |
*price indicative
- RS Stock No.:
- 463-329
- Mfr. Part No.:
- BSS84LT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 130mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | BSS84L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 225mW | |
| Typical Gate Charge Qg @ Vgs | 2.2nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Height | 0.94mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 130mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series BSS84L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 225mW | ||
Typical Gate Charge Qg @ Vgs 2.2nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Height 0.94mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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