DiodesZetex BSS84W Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SC-70 BSS84W-7-F
- RS Stock No.:
- 708-2412
- Mfr. Part No.:
- BSS84W-7-F
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD10.55
(exc. GST)
SGD11.50
(inc. GST)
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In Stock
- 200 unit(s) ready to ship from another location
- Plus 44,650 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 550 | SGD0.211 | SGD10.55 |
| 600 - 1450 | SGD0.204 | SGD10.20 |
| 1500 + | SGD0.198 | SGD9.90 |
*price indicative
- RS Stock No.:
- 708-2412
- Mfr. Part No.:
- BSS84W-7-F
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 130mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SC-70 | |
| Series | BSS84W | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.59nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 130mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SC-70 | ||
Series BSS84W | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.59nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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