Infineon OptiMOS Type N-Channel MOSFET, 106 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL

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Subtotal (1 pack of 10 units)*

SGD11.11

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SGD12.11

(inc. GST)

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10 - 40SGD1.111SGD11.11
50 - 490SGD1.017SGD10.17
500 - 990SGD0.871SGD8.71
1000 - 2490SGD0.855SGD8.55
2500 +SGD0.838SGD8.38

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RS Stock No.:
273-5248
Mfr. Part No.:
BSZ0902NSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

106A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

PG-TSDSON-8FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

48W

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56

Automotive Standard

No

The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and it is 100 percent avalanche tested. It is a optimized for high performance buck converter.

Halogen free

RoHS compliant

Pb free lead plating

Very low on resistance

Superior thermal resistance

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