Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -19.5 A, 60 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ810P06LMATMA1
- RS Stock No.:
- 284-806
- Mfr. Part No.:
- ISZ810P06LMATMA1
- Manufacturer:
- Infineon
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SGD15.69
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SGD17.10
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- Plus 5,000 unit(s) shipping from 16 November 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 90 | SGD1.569 | SGD15.69 | - |
| 100 - 240 | SGD1.49 | SGD14.90 | 5% |
| 250 - 490 | SGD1.382 | SGD13.82 | 11% |
| 500 - 990 | SGD1.271 | SGD12.71 | 18% |
| 1000 + | SGD1.226 | SGD12.26 | 21% |
*price indicative
- RS Stock No.:
- 284-806
- Mfr. Part No.:
- ISZ810P06LMATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -19.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS Power Transistor | |
| Package Type | PG-TSDSON-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 81mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -19.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS Power Transistor | ||
Package Type PG-TSDSON-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 81mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET is an Advanced power transistor delivers exceptional performance and reliability, making it an Ideal choice for demanding industrial applications. The Infineon OptiMOS Power Transistor series excels in energy efficiency with its low on resistance characteristics, ensuring minimal energy loss during operation. Its robust design is fully qualified according to JEDEC standards, providing peace of mind for engineers seeking Durable components. Operating at 60V, it is tailored for high performance applications while maintaining low thermal resistance, allowing for effective heat management.
P channel configuration optimises current control
Logic level compatibility for easy interfacing
Avalanche tested for reliability under stress
Pb free lead plating meets environmental regulations
Halogen free construction supports cleaner production
Enhanced thermal characteristics for consistent operation
High continuous drain current for diverse applications
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