Infineon OptiMOSa5 Type N-Channel MOSFET, 100 A, 100 V Enhancement, 3-Pin PG-TO220-3
- RS Stock No.:
- 273-3018
- Mfr. Part No.:
- IPP039N10N5AKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD9.39
(exc. GST)
SGD10.236
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 390 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD4.695 | SGD9.39 |
| 10 - 18 | SGD4.27 | SGD8.54 |
| 20 - 24 | SGD4.185 | SGD8.37 |
| 26 - 48 | SGD3.92 | SGD7.84 |
| 50 + | SGD3.61 | SGD7.22 |
*price indicative
- RS Stock No.:
- 273-3018
- Mfr. Part No.:
- IPP039N10N5AKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-TO220-3 | |
| Series | OptiMOSa5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 188W | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-TO220-3 | ||
Series OptiMOSa5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 188W | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1 | ||
Automotive Standard No | ||
The Infineon power MOSFET in a TO-220 package ideal for high frequency switching and synchronous rectification applications.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Related links
- Infineon OptiMOSa5 Type N-Channel MOSFET 100 V Enhancement, 3-Pin PG-TO220-3 IPP039N10N5AKSA1
- Infineon OptiMOSa5 Type N-Channel MOSFET 150 V Enhancement, 3-Pin PG-TO262-3
- Infineon OptiMOSa5 Type N-Channel MOSFET 150 V Enhancement, 3-Pin PG-TO262-3 IPI076N15N5AKSA1
- Infineon IPP65R190CFD7A Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP Type N-Channel MOSFET 700 V Enhancement, 3-Pin PG-TO220-3
- Infineon CoolMOS^TM Type N-Channel MOSFET 800 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1
- Infineon CoolMOS^TM Type N-Channel MOSFET 800 V Enhancement, 3-Pin PG-TO220-3 SPP06N80C3XKSA1