Infineon IPP Type N-Channel MOSFET, 36.23 A, 700 V Enhancement, 3-Pin PG-TO220-3
- RS Stock No.:
- 273-3020
- Mfr. Part No.:
- IPP65R060CFD7XKSA1
- Manufacturer:
- Infineon
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SGD9.28
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SGD10.12
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Units | Per unit |
|---|---|
| 1 - 9 | SGD9.28 |
| 10 - 24 | SGD8.44 |
| 25 - 49 | SGD7.73 |
| 50 - 99 | SGD7.13 |
| 100 + | SGD6.63 |
*price indicative
- RS Stock No.:
- 273-3020
- Mfr. Part No.:
- IPP65R060CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36.23A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | IPP | |
| Package Type | PG-TO220-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 171W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, RoHS | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36.23A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series IPP | ||
Package Type PG-TO220-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 171W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, RoHS | ||
The Infineon 650V cool MOS CFD7 super junction MOSFET in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar and EV charging stations, in which it enables significant efficiency improvement
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Related links
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