Infineon CoolMOSTM 800V Type N-Channel MOSFET, 8 A, 800 V, 3-Pin PG-TO220-3 SPP08N80C3XKSA1
- RS Stock No.:
- 259-1577
- Mfr. Part No.:
- SPP08N80C3XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD7.43
(exc. GST)
SGD8.098
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 940 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD3.715 | SGD7.43 |
| 10 - 18 | SGD3.325 | SGD6.65 |
| 20 - 98 | SGD3.26 | SGD6.52 |
| 100 - 498 | SGD2.685 | SGD5.37 |
| 500 + | SGD2.20 | SGD4.40 |
*price indicative
- RS Stock No.:
- 259-1577
- Mfr. Part No.:
- SPP08N80C3XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | PG-TO220-3 | |
| Series | CoolMOSTM 800V | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC1, RoHS | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-34-464 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type PG-TO220-3 | ||
Series CoolMOSTM 800V | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC1, RoHS | ||
Automotive Standard No | ||
Distrelec Product Id 304-34-464 | ||
The Infineon coolmostm power transistor it is switching application this is industrial application with high DC bulk voltage. It is qualified according to JEDEC1 for target applications.
Extreme dv/dt rated
High peak current capability
Ultra low gate charge
Ultra low effective capacitances
Related links
- Infineon CoolMOSTM 800V Type N-Channel MOSFET 800 V, 3-Pin PG-TO220-3
- Infineon CoolMOS^TM Type N-Channel MOSFET 800 V Enhancement, 3-Pin PG-TO220-3
- Infineon CoolMOS^TM Type N-Channel MOSFET 800 V Enhancement, 3-Pin PG-TO220-3 SPP06N80C3XKSA1
- Infineon IPP65R190CFD7A Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO220-3
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 3-Pin PG-TO220-3 IPP018N10N5XKSA1
- Infineon OptiMOSa5 Type N-Channel MOSFET 100 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP Type N-Channel MOSFET 700 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1