Infineon HEXFET N-Channel MOSFET, 5 A, 200 V TO-252 IRFR220NTRPBF

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Subtotal (1 pack of 5 units)*

SGD4.67

(exc. GST)

SGD5.09

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5SGD0.934SGD4.67
10 - 95SGD0.906SGD4.53
100 - 245SGD0.852SGD4.26
250 - 495SGD0.774SGD3.87
500 +SGD0.682SGD3.41

*price indicative

Packaging Options:
RS Stock No.:
258-3982
Distrelec Article No.:
304-40-536
Mfr. Part No.:
IRFR220NTRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

600mΩ

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

43W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Increased ruggedness

Wide availability from distribution partners

Industry standard qualification level

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