Infineon HEXFET Type N-Channel MOSFET, 5 A, 200 V TO-252 IRFR220NTRPBF
- RS Stock No.:
- 258-3982
- Distrelec Article No.:
- 304-40-536
- Mfr. Part No.:
- IRFR220NTRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD5.13
(exc. GST)
SGD5.59
(inc. GST)
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In Stock
- Plus 1,025 unit(s) shipping from 16 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD1.026 | SGD5.13 |
| 10 - 95 | SGD0.996 | SGD4.98 |
| 100 - 245 | SGD0.936 | SGD4.68 |
| 250 - 495 | SGD0.852 | SGD4.26 |
| 500 + | SGD0.75 | SGD3.75 |
*price indicative
- RS Stock No.:
- 258-3982
- Distrelec Article No.:
- 304-40-536
- Mfr. Part No.:
- IRFR220NTRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Increased ruggedness
Wide availability from distribution partners
Industry standard qualification level
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252 IRFR220NTRLPBF
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