Infineon HEXFET Type N-Channel MOSFET, 42 A, 85 V TO-252 IRFR2407TRPBF
- RS Stock No.:
- 257-5841
- Mfr. Part No.:
- IRFR2407TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD7.32
(exc. GST)
SGD7.98
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 2,695 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD1.464 | SGD7.32 |
| 50 - 95 | SGD1.318 | SGD6.59 |
| 100 - 245 | SGD1.038 | SGD5.19 |
| 250 - 995 | SGD1.016 | SGD5.08 |
| 1000 + | SGD0.708 | SGD3.54 |
*price indicative
- RS Stock No.:
- 257-5841
- Mfr. Part No.:
- IRFR2407TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 85V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-40-537 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 85V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Distrelec Product Id 304-40-537 | ||
The Infineon IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface mount package
Related links
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- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IRFR4104TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263