Infineon Dual N Channel Logic Level Enhancement Mode IPG20N06S4L-11 Type N-Channel MOSFET, 20 A, 60 V TDSON

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Subtotal (1 pack of 2 units)*

SGD5.81

(exc. GST)

SGD6.332

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD2.905SGD5.81
10 - 98SGD2.615SGD5.23
100 - 248SGD2.525SGD5.05
250 - 498SGD2.135SGD4.27
500 +SGD1.965SGD3.93

*price indicative

Packaging Options:
RS Stock No.:
258-3879
Mfr. Part No.:
IPG20N06S4L11ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Series

IPG20N06S4L-11

Package Type

TDSON

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±16 V

Maximum Power Dissipation Pd

65W

Typical Gate Charge Qg @ Vgs

53nC

Maximum Operating Temperature

175°C

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Standards/Approvals

RoHS Compliant

Automotive Standard

AEC-Q101

The Infineon OptiMOS T2 power-transistor is dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Exposed pad provides excellent thermal transfer, two N-Channel MOSFETs in one package with 2 isolated lead frames.

Dual N-channel Logic Level - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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