Infineon Dual N Channel Normal Level Enhancement Mode IPG16N10S4-61 Type N-Channel MOSFET, 16 A, 100 V Dual N, 8-Pin
- RS Stock No.:
- 243-9342
- Mfr. Part No.:
- IPG16N10S461ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD5.10
(exc. GST)
SGD5.55
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 14,920 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD1.02 | SGD5.10 |
| 10 - 95 | SGD0.962 | SGD4.81 |
| 100 - 245 | SGD0.906 | SGD4.53 |
| 250 - 495 | SGD0.848 | SGD4.24 |
| 500 + | SGD0.792 | SGD3.96 |
*price indicative
- RS Stock No.:
- 243-9342
- Mfr. Part No.:
- IPG16N10S461ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPG16N10S4-61 | |
| Package Type | SuperSO8 5 x 6 | |
| Pin Count | 8 | |
| Channel Mode | Dual N | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Power Dissipation Pd | 29W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual N Channel Normal Level Enhancement Mode | |
| Standards/Approvals | RoHS, AEC Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPG16N10S4-61 | ||
Package Type SuperSO8 5 x 6 | ||
Pin Count 8 | ||
Channel Mode Dual N | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Power Dissipation Pd 29W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual N Channel Normal Level Enhancement Mode | ||
Standards/Approvals RoHS, AEC Q101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon has MOSFET which is Dual N-channel normal level-Logic Level,AEC Q101 qualified and 100% Avalanche tested.
N Channel
100% Avalanche tested
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
Related links
- Infineon Dual N Channel Normal Level Enhancement Mode IPG16N10S4-61 Type N-Channel MOSFET 100 V Dual N, 8-Pin
- Infineon Dual N Channel Normal Level IPG20N06S4-15A 2 Type N-Channel MOSFET 60 V Dual N, 8-Pin SuperSO8 5 x 6
- Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Type N-Channel MOSFET 100 V Dual N, 8-Pin TDSON
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 2 Type N-Channel MOSFET 60 V N, 8-Pin SuperSO8
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET 60 V Enhancement, 8-Pin
- Infineon Dual N Channel Logic Level Enhancement Mode IPG20N06S4L-11 Type N-Channel MOSFET 60 V TDSON
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin