Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2
- RS Stock No.:
- 258-3869
- Mfr. Part No.:
- IPD90P04P405ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 2 units)*
SGD6.51
(exc. GST)
SGD7.096
(inc. GST)
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In Stock
- 732 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD3.255 | SGD6.51 |
| 10 - 98 | SGD2.92 | SGD5.84 |
| 100 - 248 | SGD2.35 | SGD4.70 |
| 250 - 498 | SGD1.93 | SGD3.86 |
| 500 + | SGD1.61 | SGD3.22 |
*price indicative
- RS Stock No.:
- 258-3869
- Mfr. Part No.:
- IPD90P04P405ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -90A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -90A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
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- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252