Infineon IPD Type P-Channel MOSFET, -73 A, -40 V Enhancement, 3-Pin TO-252 IPD70P04P409ATMA2
- RS Stock No.:
- 258-3861
- Mfr. Part No.:
- IPD70P04P409ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 2500 units)*
SGD2,195.00
(exc. GST)
SGD2,392.50
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
- Shipping from 04 January 2027
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | SGD0.878 | SGD2,195.00 |
| 5000 - 5000 | SGD0.79 | SGD1,975.00 |
| 7500 + | SGD0.711 | SGD1,777.50 |
*price indicative
- RS Stock No.:
- 258-3861
- Mfr. Part No.:
- IPD70P04P409ATMA2
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -73A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 75W | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -73A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 75W | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 75W Power Dissipation -40V Drain-Source Voltage - IPD70P04P409ATMA2
Features and Benefits:
• -73A continuous drain current supports heavy current demands
• 75W power dissipation allows sustained power handling
• 54 nC typical gate charge enables predictable switching behaviour
• TO‑252 package facilitates Compact surface mounting
Applications
• Ideal for reverse‑polarity protection in power rails
• Used with power‑management circuits in vehicular electronics
• Can be used for synchronous control in DC power stages
• Suitable for thermally stable designs across wide temperature ranges
What voltage rating applies between drain and source?
What gate voltage limits must be observed to avoid damage?
How does the package affect PCB assembly?
What thermal extremes can the device tolerate during operation?
Related links
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD70P04P409ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD85P04P4L06ATMA2
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2
- Infineon IPD Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD19DP10NMATMA1
- Infineon IPD Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD18DP10LMATMA1
