Infineon IPD Type P-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 229-1838
- Mfr. Part No.:
- IPD90P03P404ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
SGD3,030.00
(exc. GST)
SGD3,302.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 7,500 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | SGD1.212 | SGD3,030.00 |
| 5000 - 5000 | SGD1.166 | SGD2,915.00 |
| 7500 + | SGD1.151 | SGD2,877.50 |
*price indicative
- RS Stock No.:
- 229-1838
- Mfr. Part No.:
- IPD90P03P404ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 137W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 137W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Length 6.5mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel normal level power MOSFET used for automotive applications. It has lowest switching and conduction power losses for highest thermal efficiency. It is robust packages with superior quality and reliability.
It is RoHS compliant and AEC qualified
It has 175°C operating temperature
Related links
- Infineon IPD Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 IPD90P03P404ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252