Infineon OptiMOS N-Channel MOSFET, 306 A, 60 V Enhancement, 8-Pin TSON BSC012N06NSATMA1
- RS Stock No.:
- 258-0678
- Mfr. Part No.:
- BSC012N06NSATMA1
- Manufacturer:
- Infineon
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| 10000 - 10000 | SGD2.682 | SGD13,410.00 | SGD830.00 |
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- RS Stock No.:
- 258-0678
- Mfr. Part No.:
- BSC012N06NSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 306A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 214W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 306A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.20mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 214W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 60V Drain-Source Voltage, 306A Continuous Drain Current - BSC012N06NSATMA1
This MOSFET is a high-current N-channel enhancement transistor designed for surface-mount power conversion and switching applications. It operates across a wide temperature span suitable for demanding environments and supports gate-drive voltages up to the specified limit. The device is supplied in a Compact TSON package for low-profile PCB assembly and meets RoHS environmental restrictions.
Features and Benefits:
• Low on-resistance reduces conduction losses for high-efficiency designs
• High continuous current enables Compact high-power assemblies
• Substantial power dissipation supports sustained thermal loads
• Wide operating temperature range sustains performance in harsh conditions
• Gate tolerance allows robust gate-drive implementations for switching circuits
• High continuous current enables Compact high-power assemblies
• Substantial power dissipation supports sustained thermal loads
• Wide operating temperature range sustains performance in harsh conditions
• Gate tolerance allows robust gate-drive implementations for switching circuits
Applications
• Suitable for high-current DC-DC converters in power supplies
• Ideal for synchronous rectification in power management stages
• Used with motor-drive inverters requiring surface-mount solutions
• Can be used for server and telecomms power distribution modules
• Ideal for synchronous rectification in power management stages
• Used with motor-drive inverters requiring surface-mount solutions
• Can be used for server and telecomms power distribution modules
What mounting method is recommended for reliable PCB connection?
The device is supplied as a surface-mount component in a TSON package designed for soldering to PCB pads for low-profile assembly.
How does the gate voltage rating affect driver selection?
The maximum gate-to-source voltage is 20V, so drivers should not exceed this threshold to avoid gate damage.
What thermal limits should be considered for continuous operation?
The part can dissipate up to 214W
thermal management must ensure junction temperatures remain within the permitted operating range.
Is the device suitable for automotive qualification?
The component is not specified as meeting automotive standards and should be evaluated accordingly.
What is the forward diode characteristic relevant for synchronous designs?
The intrinsic diode exhibits a forward voltage of 1.2V which influences conduction and recovery behaviour in rectification circuits.
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