Infineon HEXFET Type N-Channel MOSFET, 162 A, 40 V TO-263

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Subtotal (1 reel of 800 units)*

SGD1,192.00

(exc. GST)

SGD1,296.00

(inc. GST)

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Units
Per unit
Per Reel*
800 +SGD1.49SGD1,192.00

*price indicative

RS Stock No.:
257-9273
Mfr. Part No.:
IRF1404STRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

HEXFET

Maximum Drain Source Resistance Rds

4mΩ

Maximum Power Dissipation Pd

200W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

160nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a D2 Pak package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Industry standard surface mount power package

High current carrying capability package (up to 195 A, die size dependent)

Capable of being wave soldered

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