Infineon HEXFET Type N-Channel MOSFET, 195 A, 60 V TO-263
- RS Stock No.:
- 257-9437
- Mfr. Part No.:
- IRFS7530TRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 800 units)*
SGD1,966.40
(exc. GST)
SGD2,143.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 30 March 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 1600 | SGD2.458 | SGD1,966.40 |
| 2400 + | SGD2.34 | SGD1,872.00 |
*price indicative
- RS Stock No.:
- 257-9437
- Mfr. Part No.:
- IRFS7530TRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 274nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 274nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Industry standard surface mount power package
Capable of being wave soldered
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263 IRFS7530TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
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- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-262
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-262 IRFSL7437PBF
- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IPB015N06NF2SATMA1
